RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
45
Around -96% lower latency
Faster reading speed, GB/s
16.3
11.9
Average value in the tests
Faster write speed, GB/s
10.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
23
Read speed, GB/s
11.9
16.3
Write speed, GB/s
8.1
10.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2077
2763
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2133C15-8GIS 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Inmos + 256MB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2133C15-8GVK 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SpecTek Incorporated 16G2666CL19 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C16-8GFX 8GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-4600C18-8GTRS 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Report a bug
×
Bug description
Source link