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Samsung M471B5273CH0-CF8 4GB
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5273CH0-CF8 4GB vs Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
Samsung M471B5273CH0-CF8 4GB

Samsung M471B5273CH0-CF8 4GB

Overall score
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Differences Specifications Comments

Differences

Samsung M471B5273CH0-CF8 4GB Reasons to consider
Samsung M471B5273CH0-CF8 4GB
Report a bug
Samsung M471B5673FH0-CF8 2GB Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 31
    Around -3% lower latency
  • Faster reading speed, GB/s
    10.6 left arrow 6.6
    Average value in the tests
  • Faster write speed, GB/s
    6.8 left arrow 3.6
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471B5273CH0-CF8 4GB
Samsung M471B5673FH0-CF8 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    31 left arrow 30
  • Read speed, GB/s
    6.6 left arrow 10.6
  • Write speed, GB/s
    3.6 left arrow 6.8
  • Memory bandwidth, mbps
    8500 left arrow 8500
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1066 MHz
  • Ranking PassMark (The more the better)
    921 left arrow 1479

Samsung M471B5273CH0-CF8 4GB RAM comparisons

AMD R534G1601U1S 4GB
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Samsung M471B5673FH0-CF8 2GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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