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Samsung M471B5273DH0-CK0 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M471B5273DH0-CK0 4GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Overall score
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Overall score
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Differences Specifications Comments

Differences

Samsung M471B5273DH0-CK0 4GB Reasons to consider
Samsung M471B5273DH0-CK0 4GB
Report a bug
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 41
    Around -11% lower latency
  • Faster reading speed, GB/s
    21.4 left arrow 13.3
    Average value in the tests
  • Faster write speed, GB/s
    14.3 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273DH0-CK0 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 37
  • Read speed, GB/s
    13.3 left arrow 21.4
  • Write speed, GB/s
    9.0 left arrow 14.3
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2016 left arrow 3448

Samsung M471B5273DH0-CK0 4GB RAM comparisons

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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