RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT451S6BFR8A-PB 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Compare
SK Hynix HMT451S6BFR8A-PB 4GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB
Overall score
SK Hynix HMT451S6BFR8A-PB 4GB
Overall score
Nanya Technology NT8GA64D88CX3S-JR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMT451S6BFR8A-PB 4GB
Report a bug
Reasons to consider
Nanya Technology NT8GA64D88CX3S-JR 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
44
Around -16% lower latency
Faster reading speed, GB/s
14.2
12.3
Average value in the tests
Faster write speed, GB/s
9.8
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMT451S6BFR8A-PB 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
38
Read speed, GB/s
12.3
14.2
Write speed, GB/s
7.8
9.8
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1977
2451
SK Hynix HMT451S6BFR8A-PB 4GB RAM comparisons
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Nanya Technology NT8GA64D88CX3S-JR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C14-16GVRD 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3400C16-4GRBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMD32GX4M2B3466C16 16GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3200C16-16GIS 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9965643-006.A01G 8GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-2133C15-8GRB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3866C18-8GTZR 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 99U5704-001.A00G 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CM4X8GF2400C16K4 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFD8213.C16FDD2 8GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
Kingston HP669238-071-HYC 4GB
Corsair CMW32GX4M2C3200C16 16GB
Report a bug
×
Bug description
Source link