RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology CT4G4DFS8213.8FA11 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Micron Technology CT4G4DFS8213.8FA11 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
15
Average value in the tests
Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
63
Around -80% lower latency
Faster write speed, GB/s
12.0
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
35
Read speed, GB/s
3,231.0
15.0
Write speed, GB/s
1,447.3
12.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
478
2654
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Mushkin MR[ABC]4U360JNNM8G 8GB
G Skill Intl F3-2400C10-8GTX 8GB
G Skill Intl F4-3400C16-8GVK 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA851S6CJR6N-UH 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK8GX4M2C3000C16 4GB
Smart Modular SH5641G8FJ8NWRNSQG 8GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Samsung M378B5673EH1-CF8 2GB
Corsair CM4X8GE2666C16K4 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Kingston HP698651-154-MCN 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Asgard VML41UG-MIC1U22T1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KDK8NX-MIE 16GB
Kingston 9905469-143.A00LF 4GB
Apacer Technology 78.B1GM3.AF00B 4GB
Report a bug
×
Bug description
Source link