STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M378A4G43AB2-CVF 32GB

Overall score

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score

Samsung M378A4G43AB2-CVF 32GB

Samsung M378A4G43AB2-CVF 32GB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Faster reading speed, GB/s

3 16.2

Average value in the tests

Samsung M378A4G43AB2-CVF 32GB

Reasons to consider
Samsung M378A4G43AB2-CVF 32GB

Below the latency in the PassMark tests, ns

31 63

Around -103% lower latency
Faster write speed, GB/s

12.5 1,447.3

Average value in the tests
Higher memory bandwidth, mbps

23400 5300

Around 4.42 higher bandwidth

Specifications

Complete list of technical specifications

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Samsung M378A4G43AB2-CVF 32GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

63 31
Read speed, GB/s

3,231.0 16.2
Write speed, GB/s

1,447.3 12.5
Memory bandwidth, mbps

5300 23400

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed

5-5-5-15 / 667 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)

478 3360

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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