STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Shenzhen Technology Co Ltd 8GB

Overall score

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Differences Specifications Comments

Differences

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Faster reading speed, GB/s

3 15.9

Average value in the tests

Shenzhen Technology Co Ltd 8GB

Reasons to consider
Shenzhen Technology Co Ltd 8GB

Below the latency in the PassMark tests, ns

32 63

Around -97% lower latency
Faster write speed, GB/s

11.9 1,447.3

Average value in the tests
Higher memory bandwidth, mbps

19200 5300

Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shenzhen Technology Co Ltd 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

63 32
Read speed, GB/s

3,231.0 15.9
Write speed, GB/s

1,447.3 11.9
Memory bandwidth, mbps

5300 19200

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

478 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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