RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3333C16-16GTZSK 16GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
G Skill Intl F4-3333C16-16GTZSK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Faster reading speed, GB/s
5
13.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3333C16-16GTZSK 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
46
Around -64% lower latency
Faster write speed, GB/s
9.2
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
28
Read speed, GB/s
5,535.6
13.6
Write speed, GB/s
1,852.4
9.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
858
2625
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3333C16-16GTZSK 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3333C16-16GTZSK 16GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4000C16-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-8GTZR 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-2400C16-16GFXR 16GB
A-DATA Technology DQKD1A08 1GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2666C18-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
AMD AE34G1601U1 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Samsung M3 78T5663EH3-CF7 2GB
G Skill Intl F4-3466C16-8GVR 8GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-3600C19-16GSXW 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-4133C19-8GTZR 8GB
Report a bug
×
Bug description
Source link