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Team Group Inc. UD5-6400 16GB
Samsung M378A5244CB0-CVF 4GB

Team Group Inc. UD5-6400 16GB vs Samsung M378A5244CB0-CVF 4GB

Overall score
star star star star star
Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Overall score
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Differences Specifications Comments

Differences

Team Group Inc. UD5-6400 16GB Reasons to consider
Team Group Inc. UD5-6400 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 30
    Around 30% lower latency
  • Faster write speed, GB/s
    13.9 left arrow 12.3
    Average value in the tests
Samsung M378A5244CB0-CVF 4GB Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
  • Faster reading speed, GB/s
    16 left arrow 15
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 19200
    Around 1.22 higher bandwidth

Specifications

Complete list of technical specifications
Team Group Inc. UD5-6400 16GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
  • Memory type
    DDR5 left arrow DDR4
  • Latency in PassMark, ns
    21 left arrow 30
  • Read speed, GB/s
    15.0 left arrow 16.0
  • Write speed, GB/s
    13.9 left arrow 12.3
  • Memory bandwidth, mbps
    19200 left arrow 23400
Other
  • Description
    PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    no data / 2400 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    3774 left arrow 2709

Team Group Inc. UD5-6400 16GB RAM comparisons

Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4400C16-8GTRS 8GB

Samsung M378A5244CB0-CVF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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