RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2666C19-8GNT 8GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-2666C19-8GNT 8GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
G Skill Intl F4-2666C19-8GNT 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Reasons to consider
G Skill Intl F4-2666C19-8GNT 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
53
Around -71% lower latency
Faster write speed, GB/s
13.6
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2666C19-8GNT 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
31
Read speed, GB/s
3,726.4
16.7
Write speed, GB/s
1,590.1
13.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
522
3199
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
G Skill Intl F4-2666C19-8GNT 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M471A2K43DB1-CWE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston X74R9W-MIE 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
AMD AE34G2139U2 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMD16GX4M4A2666C15 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
EVGA 8GX-D4-3200-MR 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Maxsun MSD44G24Q0 4GB
Kingston KP223C-ELD 2GB
Super Talent F3200UA8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4266C17-16GTRGB 16GB
Report a bug
×
Bug description
Source link