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TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB

TwinMOS 8DPT5MK8-TATP 2GB vs Samsung V-GeN D4S16GL26A8TL6 16GB

Overall score
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Overall score
star star star star star
Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Differences Specifications Comments

Differences

TwinMOS 8DPT5MK8-TATP 2GB Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16
    Average value in the tests
Samsung V-GeN D4S16GL26A8TL6 16GB Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 53
    Around -66% lower latency
  • Faster write speed, GB/s
    13.4 left arrow 1,590.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    53 left arrow 32
  • Read speed, GB/s
    3,726.4 left arrow 16.0
  • Write speed, GB/s
    1,590.1 left arrow 13.4
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    522 left arrow 1897

TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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