RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs G Skill Intl F4-3200C15-4GRKD 4GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
G Skill Intl F4-3200C15-4GRKD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
16.2
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C15-4GRKD 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
96
Around -284% lower latency
Faster write speed, GB/s
12.6
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
25
Read speed, GB/s
2,725.2
16.2
Write speed, GB/s
1,336.0
12.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
438
3187
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
G Skill Intl F4-3200C15-4GRKD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston LV36D4U1S8HD-8XR 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston KHX2400C15/16G 16GB
A-DATA Technology AD73I1C1674EV 4GB
Transcend Information TS1GSH64V1H 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M378A5244CB0-CRC 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GR7AFR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung M471A2K43BB1-CRC 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2666C16-8GRB 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Samsung M471B5173QH0-YK0 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Report a bug
×
Bug description
Source link