RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Teikon TMA851U6CJR6N-VKSC 4GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Teikon TMA851U6CJR6N-VKSC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
16.1
Average value in the tests
Reasons to consider
Teikon TMA851U6CJR6N-VKSC 4GB
Report a bug
Below the latency in the PassMark tests, ns
62
96
Around -55% lower latency
Faster write speed, GB/s
6.0
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
62
Read speed, GB/s
2,725.2
16.1
Write speed, GB/s
1,336.0
6.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
438
1586
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Teikon TMA851U6CJR6N-VKSC 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Corsair CMU32GX4M2C3000C16 16GB
Kingston KVR533D2N4 512MB
Panram International Corporation W4U2133PS-8G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston HP26D4S9S8MD-8 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
A-DATA Technology ADOVE1A0834E 1GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Super Talent F24UB16GV 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMT64GX4M8Z3600C16 8GB
Kingston KVR533D2N4 512MB
Samsung M471A1G44AB0-CWE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X16GC3000C16K8 16GB
Report a bug
×
Bug description
Source link