RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Compare
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Overall score
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Overall score
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
44
Around -69% lower latency
Faster reading speed, GB/s
15.6
10.9
Average value in the tests
Faster write speed, GB/s
11.6
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
26
Read speed, GB/s
10.9
15.6
Write speed, GB/s
7.5
11.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1853
2808
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
MemxPro Inc. D4S8GHIOFFC 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CB16GS2400.C16J 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2666C18-8GFT 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Kingston 9905403-444.A00LF 4GB
Kingston XN205T-MIE 16GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Peak Electronics 256X64M-67E 2GB
Avant Technology J641GU42J9266NL 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Samsung M393B1K70QB0-CK0 8GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
Kingston 99U5474-010.A00LF 2GB
Panram International Corporation W4N2666PS-16G 16GB
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Report a bug
×
Bug description
Source link