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A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471B5773DH0-CK0 2GB

A-DATA Technology AM1U16BC4P2-B19H 4GB vs Samsung M471B5773DH0-CK0 2GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Puntuación global
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Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Diferencias Especificaciones Comentarios

Diferencias

A-DATA Technology AM1U16BC4P2-B19H 4GB Razones a tener en cuenta
A-DATA Technology AM1U16BC4P2-B19H 4GB
Informar de un error
  • Mayor velocidad de escritura, GB/s
    8.4 left arrow 7.8
    Valor medio en las pruebas
Samsung M471B5773DH0-CK0 2GB Razones a tener en cuenta
Samsung M471B5773DH0-CK0 2GB
Informar de un error
  • Mayor velocidad de lectura, GB/s
    12.2 left arrow 11.2
    Valor medio en las pruebas

Especificaciones

Lista completa de especificaciones técnicas
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471B5773DH0-CK0 2GB
Principales características
  • Tipo de memoria
    DDR3 left arrow DDR3
  • Latencia en PassMark, ns
    27 left arrow 27
  • Velocidad de lectura, GB/s
    11.2 left arrow 12.2
  • Velocidad de escritura, GB/s
    8.4 left arrow 7.8
  • Ancho de banda de la memoria, mbps
    12800 left arrow 12800
Other
  • Descripción
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Tiempos / Velocidad del reloj
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Clasificación PassMark (Cuanto más, mejor)
    1967 left arrow 1763

A-DATA Technology AM1U16BC4P2-B19H 4GB Comparaciones de la memoria RAM

AMD R534G1601U1S 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M471B5773DH0-CK0 2GB Comparaciones de la memoria RAM

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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