SK Hynix HMT425S6CFR6A-PB 2GB vs Samsung M471B5773DH0-CH9 2GB

Puntuación global

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Puntuación global

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Diferencias Especificaciones Comentarios

Diferencias

SK Hynix HMT425S6CFR6A-PB 2GB

Razones a tener en cuenta
SK Hynix HMT425S6CFR6A-PB 2GB

Informar de un error

Por debajo de la latencia en las pruebas PassMark, ns

41 43

En 5% menor latencia
Mayor ancho de banda de la memoria, mbps

12800 10600

En 1.21% mayor ancho de banda

Samsung M471B5773DH0-CH9 2GB

Razones a tener en cuenta
Samsung M471B5773DH0-CH9 2GB

Informar de un error

Mayor velocidad de lectura, GB/s

11 10.1

Valor medio en las pruebas
Mayor velocidad de escritura, GB/s

7.2 7.1

Valor medio en las pruebas

Especificaciones

Lista completa de especificaciones técnicas

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M471B5773DH0-CH9 2GB

Principales características

Tipo de memoria

DDR3 DDR3
Latencia en PassMark, ns

41 43
Velocidad de lectura, GB/s

10.1 11.0
Velocidad de escritura, GB/s

7.1 7.2
Ancho de banda de la memoria, mbps

12800 10600

Other

Descripción

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Tiempos / Velocidad del reloj

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
Clasificación PassMark (Cuanto más, mejor)

1484 1393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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