Samsung M4 70T5663CZ3-CE6 2GB vs A-DATA Technology DDR4 3200 2OZ 4GB

Note globale

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Note globale

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

Différences Spécifications Commentaires

Différences

Samsung M4 70T5663CZ3-CE6 2GB

Raisons de considérer
Samsung M4 70T5663CZ3-CE6 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

3 17.2

Valeur moyenne dans les tests

A-DATA Technology DDR4 3200 2OZ 4GB

Raisons de considérer
A-DATA Technology DDR4 3200 2OZ 4GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

29 69

Autour de -138% latence réduite
Vitesse d'écriture plus rapide, GB/s

13.8 1,441.2

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

17000 5300

Autour de 3.21 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

Samsung M4 70T5663CZ3-CE6 2GB

A-DATA Technology DDR4 3200 2OZ 4GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

69 29
Vitesse de lecture, GB/s

3,325.1 17.2
Vitesse d'écriture, GB/s

1,441.2 13.8
Largeur de bande de la mémoire, mbps

5300 17000

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Vitesse d'horloge

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)

525 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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