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AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

AMD R534G1601U1S-UO 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Punteggio complessivo
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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

AMD R534G1601U1S-UO 4GB Motivi da considerare
AMD R534G1601U1S-UO 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    14.7 left arrow 13.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.2 left arrow 8.1
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB
Segnala un bug

Specifiche tecniche

Elenco completo delle specifiche tecniche
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    27 left arrow 27
  • Velocità di lettura, GB/s
    14.7 left arrow 13.3
  • Velocità di scrittura, GB/s
    9.2 left arrow 8.1
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2272 left arrow 2225

AMD R534G1601U1S-UO 4GB Confronto tra le RAM

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8C-PB 4GB Confronto tra le RAM

Kingston 99U5474-036.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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