Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Samsung M471B5273CH0-CH9 4GB

Punteggio complessivo

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Punteggio complessivo

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Al di sotto della latenza nei test PassMark, ns

30 48

Intorno 38% latenza inferiore

Samsung M471B5273CH0-CH9 4GB

Motivi da considerare
Samsung M471B5273CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

8.9 8.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

5.9 5.6

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Samsung M471B5273CH0-CH9 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

30 48
Velocità di lettura, GB/s

8.8 8.9
Velocità di scrittura, GB/s

5.6 5.9
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1344 1420

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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