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Patriot Memory (PDP Systems) PSD38G16002S 8GB
Samsung M471B5773DH0-CK0 2GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB vs Samsung M471B5773DH0-CK0 2GB

Punteggio complessivo
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Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Punteggio complessivo
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Differenze Specifiche tecniche Commenti

Differenze

Patriot Memory (PDP Systems) PSD38G16002S 8GB Motivi da considerare
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.6 left arrow 7.8
    Valore medio nei test
Samsung M471B5773DH0-CK0 2GB Motivi da considerare
Samsung M471B5773DH0-CK0 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    27 left arrow 41
    Intorno -52% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Samsung M471B5773DH0-CK0 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    41 left arrow 27
  • Velocità di lettura, GB/s
    12.2 left arrow 12.2
  • Velocità di scrittura, GB/s
    8.6 left arrow 7.8
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2062 left arrow 1763

Patriot Memory (PDP Systems) PSD38G16002S 8GB Confronto tra le RAM

Samsung M471B5173BH0-CK0 4GB
AMD R538G1601U2S 8GB

Samsung M471B5773DH0-CK0 2GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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