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PNY Electronics PNY 2GB
Avant Technology W641GU42J5213N3 8GB

PNY Electronics PNY 2GB vs Avant Technology W641GU42J5213N3 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics PNY 2GB Motivi da considerare
PNY Electronics PNY 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.8 left arrow 13.7
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.4 left arrow 6.1
    Valore medio nei test
Avant Technology W641GU42J5213N3 8GB Motivi da considerare
Avant Technology W641GU42J5213N3 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    23 left arrow 27
    Intorno -17% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 10600
    Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
PNY Electronics PNY 2GB
Avant Technology W641GU42J5213N3 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    27 left arrow 23
  • Velocità di lettura, GB/s
    13.8 left arrow 13.7
  • Velocità di scrittura, GB/s
    8.4 left arrow 6.1
  • Larghezza di banda della memoria, mbps
    10600 left arrow 17000
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2274 left arrow 2130

PNY Electronics PNY 2GB Confronto tra le RAM

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Avant Technology W641GU42J5213N3 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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