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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C17-4GVR 4GB

Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2400C17-4GVR 4GB

Punteggio complessivo
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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Punteggio complessivo
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G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung 1600 CL10 Series 8GB Motivi da considerare
Samsung 1600 CL10 Series 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    16.1 left arrow 15.2
    Valore medio nei test
G Skill Intl F4-2400C17-4GVR 4GB Motivi da considerare
G Skill Intl F4-2400C17-4GVR 4GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    12.0 left arrow 10.1
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 12800
    Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2400C17-4GVR 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    25 left arrow 25
  • Velocità di lettura, GB/s
    16.1 left arrow 15.2
  • Velocità di scrittura, GB/s
    10.1 left arrow 12.0
  • Larghezza di banda della memoria, mbps
    12800 left arrow 19200
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2764 left arrow 2740

Samsung 1600 CL10 Series 8GB Confronto tra le RAM

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2400C17-4GVR 4GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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