Samsung M3 78T2863EHS-CF7 1GB vs Inmos + 256MB

Punteggio complessivo

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Punteggio complessivo

Inmos + 256MB

Inmos + 256MB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T2863EHS-CF7 1GB

Motivi da considerare
Samsung M3 78T2863EHS-CF7 1GB

Velocità di lettura più elevata, GB/s

4 11.5

Valore medio nei test

Inmos + 256MB

Motivi da considerare
Inmos + 256MB

Al di sotto della latenza nei test PassMark, ns

30 59

Intorno -97% latenza inferiore
Velocità di scrittura più elevata, GB/s

9.1 2,123.3

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

16800 6400

Intorno 2.63 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T2863EHS-CF7 1GB

Inmos + 256MB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

59 30
Velocità di lettura, GB/s

4,833.8 11.5
Velocità di scrittura, GB/s

2,123.3 9.1
Larghezza di banda della memoria, mbps

6400 16800

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz no data
Classifica PassMark (più sono, meglio è)

731 2318

RAM Latency Calculator

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