Samsung M3 78T5663RZ3-CE6 2GB vs Maxsun MSD44G24Q3 4GB

Punteggio complessivo

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Punteggio complessivo

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T5663RZ3-CE6 2GB

Motivi da considerare
Samsung M3 78T5663RZ3-CE6 2GB

Velocità di lettura più elevata, GB/s

4 10.5

Valore medio nei test

Maxsun MSD44G24Q3 4GB

Motivi da considerare
Maxsun MSD44G24Q3 4GB

Al di sotto della latenza nei test PassMark, ns

32 60

Intorno -88% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.7 2,168.2

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

19200 5300

Intorno 3.62 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T5663RZ3-CE6 2GB

Maxsun MSD44G24Q3 4GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

60 32
Velocità di lettura, GB/s

4,595.2 10.5
Velocità di scrittura, GB/s

2,168.2 8.7
Larghezza di banda della memoria, mbps

5300 19200

Other

Descrizione

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

941 2214

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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