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Samsung M378B1G73EB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Samsung M378B1G73EB0-CK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

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Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B1G73EB0-CK0 8GB Motivi da considerare
Samsung M378B1G73EB0-CK0 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.3 left arrow 9.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.5 left arrow 6.9
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Segnala un bug
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 12800
    Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M378B1G73EB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    41 left arrow 41
  • Velocità di lettura, GB/s
    13.3 left arrow 9.3
  • Velocità di scrittura, GB/s
    8.5 left arrow 6.9
  • Larghezza di banda della memoria, mbps
    12800 left arrow 19200
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2322 left arrow 2044

Samsung M378B1G73EB0-CK0 8GB Confronto tra le RAM

Samsung M378B1G73DB0-CK0 8GB
Smart Modular SF4721G8CKHH6DFSDS 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB Confronto tra le RAM

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RAM Latency Calculator
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