Samsung M378B5673EH1-CF8 2GB vs Corsair CMSO4GX4M1A2133C15 4GB

Punteggio complessivo

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Punteggio complessivo

Corsair CMSO4GX4M1A2133C15 4GB

Corsair CMSO4GX4M1A2133C15 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673EH1-CF8 2GB

Motivi da considerare
Samsung M378B5673EH1-CF8 2GB

Velocità di lettura più elevata, GB/s

12.7 12.2

Valore medio nei test

Corsair CMSO4GX4M1A2133C15 4GB

Motivi da considerare
Corsair CMSO4GX4M1A2133C15 4GB

Velocità di scrittura più elevata, GB/s

8.3 7.5

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 8500

Intorno 2 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5673EH1-CF8 2GB

Corsair CMSO4GX4M1A2133C15 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

28 28
Velocità di lettura, GB/s

12.7 12.2
Velocità di scrittura, GB/s

7.5 8.3
Larghezza di banda della memoria, mbps

8500 17000

Other

Descrizione

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

1988 2018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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