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Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB vs Samsung M393A1G43EB1-CRC 8GB

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Samsung M393A1G43DB1-CRC 8GB

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Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393A1G43DB1-CRC 8GB Motivi da considerare
Samsung M393A1G43DB1-CRC 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    32 left arrow 49
    Intorno 35% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.5 left arrow 8.3
    Valore medio nei test
Samsung M393A1G43EB1-CRC 8GB Motivi da considerare
Samsung M393A1G43EB1-CRC 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.9 left arrow 10.8
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    32 left arrow 49
  • Velocità di lettura, GB/s
    10.8 left arrow 10.9
  • Velocità di scrittura, GB/s
    8.5 left arrow 8.3
  • Larghezza di banda della memoria, mbps
    19200 left arrow 19200
Other
  • Descrizione
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2349 left arrow 2413

Samsung M393A1G43DB1-CRC 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A1G43EB1-CRC 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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