Samsung M4 70T5663QZ3-CF7 2GB vs Kingmax Semiconductor KLDE88F-B8HS5 2GB

Punteggio complessivo

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Punteggio complessivo

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M4 70T5663QZ3-CF7 2GB

Motivi da considerare
Samsung M4 70T5663QZ3-CF7 2GB

Velocità di lettura più elevata, GB/s

4 4

Valore medio nei test

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Motivi da considerare
Kingmax Semiconductor KLDE88F-B8HS5 2GB

Al di sotto della latenza nei test PassMark, ns

54 64

Intorno -19% latenza inferiore
Velocità di scrittura più elevata, GB/s

2,275.0 1,869.1

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M4 70T5663QZ3-CF7 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR2
Latenza in PassMark, ns

64 54
Velocità di lettura, GB/s

4,477.7 4,390.6
Velocità di scrittura, GB/s

1,869.1 2,275.0
Larghezza di banda della memoria, mbps

6400 6400

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Classifica PassMark (più sono, meglio è)

697 669

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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