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Samsung M471B1G73QH0-YK0 8GB
Mushkin 99[2/7/4]200[F/T] 8GB

Samsung M471B1G73QH0-YK0 8GB vs Mushkin 99[2/7/4]200[F/T] 8GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Punteggio complessivo
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Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B1G73QH0-YK0 8GB Motivi da considerare
Samsung M471B1G73QH0-YK0 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.8 left arrow 10.5
    Valore medio nei test
Mushkin 99[2/7/4]200[F/T] 8GB Motivi da considerare
Mushkin 99[2/7/4]200[F/T] 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    46 left arrow 47
    Intorno -2% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471B1G73QH0-YK0 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    47 left arrow 46
  • Velocità di lettura, GB/s
    11.8 left arrow 10.5
  • Velocità di scrittura, GB/s
    8.0 left arrow 8.0
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2061 left arrow 2368

Samsung M471B1G73QH0-YK0 8GB Confronto tra le RAM

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Mushkin 99[2/7/4]200[F/T] 8GB Confronto tra le RAM

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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