SK Hynix HMT325U6CFR8C-H9 2GB vs Samsung M378B5273CH0-CH9 4GB

Punteggio complessivo

SK Hynix HMT325U6CFR8C-H9 2GB

SK Hynix HMT325U6CFR8C-H9 2GB

Punteggio complessivo

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT325U6CFR8C-H9 2GB

Motivi da considerare
SK Hynix HMT325U6CFR8C-H9 2GB

Velocità di lettura più elevata, GB/s

13.6 13.2

Valore medio nei test

Samsung M378B5273CH0-CH9 4GB

Motivi da considerare
Samsung M378B5273CH0-CH9 4GB

Al di sotto della latenza nei test PassMark, ns

37 39

Intorno -5% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.4 7.8

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix HMT325U6CFR8C-H9 2GB

Samsung M378B5273CH0-CH9 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

39 37
Velocità di lettura, GB/s

13.6 13.2
Velocità di scrittura, GB/s

7.8 8.4
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1940 2143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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