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SK Hynix HMT351U6EFR8C-PB 4GB
Samsung M378B5173EB0-CK0 4GB

SK Hynix HMT351U6EFR8C-PB 4GB vs Samsung M378B5173EB0-CK0 4GB

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SK Hynix HMT351U6EFR8C-PB 4GB

SK Hynix HMT351U6EFR8C-PB 4GB

Punteggio complessivo
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Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT351U6EFR8C-PB 4GB Motivi da considerare
SK Hynix HMT351U6EFR8C-PB 4GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.7 left arrow 8.1
    Valore medio nei test
Samsung M378B5173EB0-CK0 4GB Motivi da considerare
Samsung M378B5173EB0-CK0 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.9 left arrow 13.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT351U6EFR8C-PB 4GB
Samsung M378B5173EB0-CK0 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 42
  • Velocità di lettura, GB/s
    13.6 left arrow 13.9
  • Velocità di scrittura, GB/s
    8.7 left arrow 8.1
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2143 left arrow 2150

SK Hynix HMT351U6EFR8C-PB 4GB Confronto tra le RAM

Samsung M471B5273DH0-CH9 4GB
SK Hynix HMT41GS6AFR8A-PB 8GB

Samsung M378B5173EB0-CK0 4GB Confronto tra le RAM

Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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