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SK Hynix HMT425U6AFR6C-PB 2GB
Samsung M378B5773CH0-CK0 2GB

SK Hynix HMT425U6AFR6C-PB 2GB vs Samsung M378B5773CH0-CK0 2GB

Punteggio complessivo
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SK Hynix HMT425U6AFR6C-PB 2GB

SK Hynix HMT425U6AFR6C-PB 2GB

Punteggio complessivo
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Samsung M378B5773CH0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT425U6AFR6C-PB 2GB Motivi da considerare
SK Hynix HMT425U6AFR6C-PB 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.9 left arrow 11.8
    Valore medio nei test
Samsung M378B5773CH0-CK0 2GB Motivi da considerare
Samsung M378B5773CH0-CK0 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    33 left arrow 40
    Intorno -21% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.9 left arrow 8.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMT425U6AFR6C-PB 2GB
Samsung M378B5773CH0-CK0 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    40 left arrow 33
  • Velocità di lettura, GB/s
    13.9 left arrow 11.8
  • Velocità di scrittura, GB/s
    8.6 left arrow 8.9
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2205 left arrow 1988

SK Hynix HMT425U6AFR6C-PB 2GB Confronto tra le RAM

Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB Confronto tra le RAM

Micron Technology 16JTF1G64AZ-1G6E1 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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