TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M378A1G43EB1-CPB 8GB

Punteggio complessivo

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Punteggio complessivo

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

TwinMOS 8DPT5MK8-TATP 2GB

Motivi da considerare
TwinMOS 8DPT5MK8-TATP 2GB

Velocità di lettura più elevata, GB/s

3 15.4

Valore medio nei test

Samsung M378A1G43EB1-CPB 8GB

Motivi da considerare
Samsung M378A1G43EB1-CPB 8GB

Al di sotto della latenza nei test PassMark, ns

34 53

Intorno -56% latenza inferiore
Velocità di scrittura più elevata, GB/s

11.5 1,590.1

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 6400

Intorno 2.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A1G43EB1-CPB 8GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

53 34
Velocità di lettura, GB/s

3,726.4 15.4
Velocità di scrittura, GB/s

1,590.1 11.5
Larghezza di banda della memoria, mbps

6400 17000

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

522 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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