A-DATA Technology AM2U16BC4P2-B05B 4GB vs Wilk Elektronik S.A. GR3200S464L22/16G 16GB

総合得点

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

総合得点

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

相違点仕様コメント

相違点

A-DATA Technology AM2U16BC4P2-B05B 4GB

考慮すべき理由
A-DATA Technology AM2U16BC4P2-B05B 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 46

周辺 43% 低遅延

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

考慮すべき理由
Wilk Elektronik S.A. GR3200S464L22/16G 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.6 14

テスト平均値
書き込み速度の高速化、GB/s

15.4 9.1

テスト平均値
より高いメモリ帯域幅、mbps

25600 12800

周辺 2 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology AM2U16BC4P2-B05B 4GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 46
読み出し速度、GB/s

14.0 16.6
書き込み速度、GB/秒

9.1 15.4
メモリ帯域幅、mbps

12800 25600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
タイミング / クロック速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2330 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Corsair CMK32GX4M4A2400C14 8GB

Corsair CMK32GX4M4A2400C14 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB