A-DATA Technology DQKD1A08 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

総合得点

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

相違点仕様コメント

相違点

A-DATA Technology DQKD1A08 1GB

考慮すべき理由
A-DATA Technology DQKD1A08 1GB

バグを報告する

読み出し速度の高速化、GB/s

2 14.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 52

周辺 -93% 低遅延
書き込み速度の高速化、GB/s

10.5 1,145.9

テスト平均値
より高いメモリ帯域幅、mbps

17000 4200

周辺 4.05 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

52 27
読み出し速度、GB/s

2,614.5 14.6
書き込み速度、GB/秒

1,145.9 10.5
メモリ帯域幅、mbps

4200 17000

Other

商品説明

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

409 2409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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