ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

総合得点

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

総合得点

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

相違点仕様コメント

相違点

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

考慮すべき理由
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

バグを報告する

読み出し速度の高速化、GB/s

21.4 13.4

テスト平均値
書き込み速度の高速化、GB/s

14.3 12.1

テスト平均値

Samsung M323R2GA3BB0-CQKOD 16GB

考慮すべき理由
Samsung M323R2GA3BB0-CQKOD 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 37

周辺 -48% 低遅延

仕様

技術仕様の完全リスト

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

主な特徴

メモリータイプ

DDR4 DDR5
PassMarkにおけるレイテンシー、ns

37 25
読み出し速度、GB/s

21.4 13.4
書き込み速度、GB/秒

14.3 12.1
メモリ帯域幅、mbps

19200 19200

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz no data / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

3448 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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