Corsair CML16GX3M2A1600C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

総合得点

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

相違点仕様コメント

相違点

Corsair CML16GX3M2A1600C10 8GB

考慮すべき理由
Corsair CML16GX3M2A1600C10 8GB

バグを報告する

読み出し速度の高速化、GB/s

13.9 10

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 41

周辺 -37% 低遅延
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Corsair CML16GX3M2A1600C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

41 30
読み出し速度、GB/s

13.9 10.0
書き込み速度、GB/秒

8.5 8.5
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2385 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

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Samsung 1600 CL10 Series 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Peak Electronics 256X64M-67E 2GB

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Kingston 9965684-005.A00G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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PNY Electronics PNY 2GB

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Corsair CMT32GX4M2C3466C16 16GB

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Samsung M378B5173EB0-CK0 4GB

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