Crucial Technology CT51264BD1339.M16F 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

総合得点

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

総合得点

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

相違点仕様コメント

相違点

Crucial Technology CT51264BD1339.M16F 4GB

考慮すべき理由
Crucial Technology CT51264BD1339.M16F 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 71

周辺 65% 低遅延
書き込み速度の高速化、GB/s

8.6 6.4

テスト平均値

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

考慮すべき理由
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

バグを報告する

読み出し速度の高速化、GB/s

15.6 12.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Crucial Technology CT51264BD1339.M16F 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 71
読み出し速度、GB/s

12.1 15.6
書き込み速度、GB/秒

8.6 6.4
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2045 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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