Essencore Limited KD4AGS88A-26N1600 16GB vs G Skill Intl F4-3600C19-16GTRS 16GB

総合得点

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

総合得点

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

相違点仕様コメント

相違点

Essencore Limited KD4AGS88A-26N1600 16GB

考慮すべき理由
Essencore Limited KD4AGS88A-26N1600 16GB

バグを報告する

より高いメモリ帯域幅、mbps

21300 17000

周辺 1.25% 高帯域

G Skill Intl F4-3600C19-16GTRS 16GB

考慮すべき理由
G Skill Intl F4-3600C19-16GTRS 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 32

周辺 -10% 低遅延
読み出し速度の高速化、GB/s

18.4 15.6

テスト平均値
書き込み速度の高速化、GB/s

15.9 10.9

テスト平均値

仕様

技術仕様の完全リスト

Essencore Limited KD4AGS88A-26N1600 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

32 29
読み出し速度、GB/s

15.6 18.4
書き込み速度、GB/秒

10.9 15.9
メモリ帯域幅、mbps

21300 17000

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2890 3736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-4400C19-32GTZR 32GB

G Skill Intl F4-4400C19-32GTZR 32GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Avant Technology J641GU42J7240ND 8GB

Avant Technology J641GU42J7240ND 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Essencore Limited KD4AGU880-34A170X 16GB

Essencore Limited KD4AGU880-34A170X 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

G Skill Intl F4-2400C16-16GRS 16GB

G Skill Intl F4-2400C16-16GRS 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB