Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB vs Samsung M471A2K43BB1-CTD 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

総合得点

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

バグを報告する

Samsung M471A2K43BB1-CTD 16GB

考慮すべき理由
Samsung M471A2K43BB1-CTD 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 25

周辺 -9% 低遅延
読み出し速度の高速化、GB/s

17 14.8

テスト平均値
書き込み速度の高速化、GB/s

14.7 8.9

テスト平均値
より高いメモリ帯域幅、mbps

21300 17000

周辺 1.25 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Samsung M471A2K43BB1-CTD 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

25 23
読み出し速度、GB/s

14.8 17.0
書き込み速度、GB/秒

8.9 14.7
メモリ帯域幅、mbps

17000 21300

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2542 3156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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