Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-2666C19-8GIS 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

総合得点

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 30

周辺 3% 低遅延

G Skill Intl F4-2666C19-8GIS 8GB

考慮すべき理由
G Skill Intl F4-2666C19-8GIS 8GB

バグを報告する

読み出し速度の高速化、GB/s

16.5 13.4

テスト平均値
書き込み速度の高速化、GB/s

12.8 9.0

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

G Skill Intl F4-2666C19-8GIS 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 30
読み出し速度、GB/s

13.4 16.5
書き込み速度、GB/秒

9.0 12.8
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2423 3158

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB