Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

総合得点

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

バグを報告する

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

考慮すべき理由
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 62

周辺 -138% 低遅延
読み出し速度の高速化、GB/s

18.2 7.4

テスト平均値
書き込み速度の高速化、GB/s

17.3 5.9

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

62 26
読み出し速度、GB/s

7.4 18.2
書き込み速度、GB/秒

5.9 17.3
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1612 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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