Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Heoriady M378A1K43BB2-CTD 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

総合得点

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 17.3

テスト平均値

Heoriady M378A1K43BB2-CTD 8GB

考慮すべき理由
Heoriady M378A1K43BB2-CTD 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

64 65

周辺 -2% 低遅延
書き込み速度の高速化、GB/s

8.2 1,592.0

テスト平均値
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Heoriady M378A1K43BB2-CTD 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 64
読み出し速度、GB/s

3,580.8 17.3
書き込み速度、GB/秒

1,592.0 8.2
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

572 2067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Samsung M3 78T5663RZ3-CE6 2GB

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Panram International Corporation W4U2400PS-8G 8GB

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Samsung M378B5273CH0-CH9 4GB

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Apacer Technology GD2.1527WT.001 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905403-156.A00LF 2GB

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Apacer Technology 78.D2GF2.AU30B 16GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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G Skill Intl F4-3333C16-8GTZSW 8GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB