Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C16-8GTZR 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 26

周辺 8% 低遅延
より高いメモリ帯域幅、mbps

19200 17000

周辺 1.13% 高帯域

G Skill Intl F4-4000C16-8GTZR 8GB

考慮すべき理由
G Skill Intl F4-4000C16-8GTZR 8GB

バグを報告する

読み出し速度の高速化、GB/s

18.2 16

テスト平均値
書き込み速度の高速化、GB/s

17.2 12.5

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-4000C16-8GTZR 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 26
読み出し速度、GB/s

16.0 18.2
書き込み速度、GB/秒

12.5 17.2
メモリ帯域幅、mbps

19200 17000

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2925 3885

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

Mushkin 994083 4GB

Mushkin 994083 4GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

A-DATA Technology AX5U5200C3816G-B 16GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Transcend Information JM3200HLB-16G 16GB

Transcend Information JM3200HLB-16G 16GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

Corsair CMK32GX4M4Z2933C16 8GB

Corsair CMK32GX4M4Z2933C16 8GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston MSI24D4U7D8MD-16 16GB

Kingston MSI24D4U7D8MD-16 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Transcend Information JM2666HLB-16G 16GB

Transcend Information JM2666HLB-16G 16GB