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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点
star star star star star
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

相違点 仕様 コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    24 left arrow 26
    周辺 8% 低遅延
  • より高いメモリ帯域幅、mbps
    19200 left arrow 17000
    周辺 1.13% 高帯域
Patriot Memory (PDP Systems) 4000 C19 Series 8GB 考慮すべき理由
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
バグを報告する
  • 読み出し速度の高速化、GB/s
    19.7 left arrow 16
    テスト平均値
  • 書き込み速度の高速化、GB/s
    17.0 left arrow 12.5
    テスト平均値

仕様

技術仕様の完全リスト
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
主な特徴
  • メモリータイプ
    DDR4 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    24 left arrow 26
  • 読み出し速度、GB/s
    16.0 left arrow 19.7
  • 書き込み速度、GB/秒
    12.5 left arrow 17.0
  • メモリ帯域幅、mbps
    19200 left arrow 17000
Other
  • 商品説明
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • タイミング / クロック速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • ランキングPassMark（多ければ多いほど良い）
    2925 left arrow 3842

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAMの比較

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB RAMの比較

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
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