Kingston KHX1866C10D3/4G 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

総合得点

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

相違点仕様コメント

相違点

Kingston KHX1866C10D3/4G 4GB

考慮すべき理由
Kingston KHX1866C10D3/4G 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.2 14.6

テスト平均値

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 38

周辺 -52% 低遅延
書き込み速度の高速化、GB/s

9.9 9.3

テスト平均値
より高いメモリ帯域幅、mbps

19200 14200

周辺 1.35 高帯域

仕様

技術仕様の完全リスト

Kingston KHX1866C10D3/4G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

38 25
読み出し速度、GB/s

15.2 14.6
書き込み速度、GB/秒

9.3 9.9
メモリ帯域幅、mbps

14200 19200

Other

商品説明

PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2496 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

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Kingston 9905403-156.A00LF 2GB

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Corsair CMK8GX4M2B3866C18 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Corsair CMK4GX4M1A2400C14 4GB