Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

総合得点

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

相違点仕様コメント

相違点

Nanya Technology M2N1G64TUH8D5F-AC 1GB

考慮すべき理由
Nanya Technology M2N1G64TUH8D5F-AC 1GB

バグを報告する

より高いメモリ帯域幅、mbps

6400 5300

周辺 1.21% 高帯域

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

67 92

周辺 -37% 低遅延
読み出し速度の高速化、GB/s

2 2

テスト平均値
書き込み速度の高速化、GB/s

1,273.3 1,266.1

テスト平均値

仕様

技術仕様の完全リスト

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

主な特徴

メモリータイプ

DDR2 DDR2
PassMarkにおけるレイテンシー、ns

92 67
読み出し速度、GB/s

2,105.4 2,857.8
書き込み速度、GB/秒

1,266.1 1,273.3
メモリ帯域幅、mbps

6400 5300

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
タイミング / クロック速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
ランキングPassMark（多ければ多いほど良い）

339 344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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