Nanya Technology NT512T64U88B0BY-3C 512MB vs Patriot Memory (PDP Systems) 3000 C16 Series 4GB

総合得点

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

総合得点

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

相違点仕様コメント

相違点

Nanya Technology NT512T64U88B0BY-3C 512MB

考慮すべき理由
Nanya Technology NT512T64U88B0BY-3C 512MB

バグを報告する

読み出し速度の高速化、GB/s

2 16.9

テスト平均値

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

考慮すべき理由
Patriot Memory (PDP Systems) 3000 C16 Series 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 71

周辺 -122% 低遅延
書き込み速度の高速化、GB/s

13.1 1,322.6

テスト平均値
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT512T64U88B0BY-3C 512MB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

71 32
読み出し速度、GB/s

2,831.6 16.9
書き込み速度、GB/秒

1,322.6 13.1
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

399 3222

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMN32GX4M2Z3200C16 16GB

Corsair CMN32GX4M2Z3200C16 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB