Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB

総合得点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

総合得点

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

相違点仕様コメント

相違点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

考慮すべき理由
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

35 49

周辺 29% 低遅延

Micron Technology 4ATF1G64HZ-3G2E2 8GB

考慮すべき理由
Micron Technology 4ATF1G64HZ-3G2E2 8GB

バグを報告する

読み出し速度の高速化、GB/s

15.8 13.7

テスト平均値
書き込み速度の高速化、GB/s

11.0 9.6

テスト平均値
より高いメモリ帯域幅、mbps

25600 12800

周辺 2 高帯域

仕様

技術仕様の完全リスト

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

35 49
読み出し速度、GB/s

13.7 15.8
書き込み速度、GB/秒

9.6 11.0
メモリ帯域幅、mbps

12800 25600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
タイミング / クロック速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2312 2534

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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