PNY Electronics PNY 2GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB

総合得点

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

総合得点

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

相違点仕様コメント

相違点

PNY Electronics PNY 2GB

考慮すべき理由
PNY Electronics PNY 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 32

周辺 16% 低遅延

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

考慮すべき理由
Chun Well Technology Holding Limited MD4U1632160DCW 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.8 13.8

テスト平均値
書き込み速度の高速化、GB/s

15.4 8.4

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

PNY Electronics PNY 2GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

27 32
読み出し速度、GB/s

13.8 16.8
書き込み速度、GB/秒

8.4 15.4
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2274 3579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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